An Effective Sneak-Path Solution Based on a Transient-Relaxation Device |
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Authors: | Tianda Fu Shuai Fu Lu Sun Hongyan Gao Jun Yao |
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Affiliation: | Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, MA, 01003 USA |
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Abstract: | An efficient strategy for addressing individual devices is required to unveil the full potential of memristors for high-density memory and computing applications. Existing strategies using two-terminal selectors that are preferable for compact integration have trade-offs in reduced generality or functional window. A strategy that applies to broad memristors and maintains their full-range functional window is proposed. This strategy uses a type of unipolar switch featuring a transient relaxation or retention as the selector. The unidirectional current flow in the switch suppresses the sneak-path current, whereas the transient-relaxation window is exploited for bidirectional programming. A unipolar volatile memristor with ultralow switching voltage (e.g., <100 mV), constructed from a protein nanowire dielectric harvested from Geobacter sulfurreducens, is specifically employed as the example switch to highlight the advantages and scalability in the strategy for array integration. |
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Keywords: | memory memristor neuromorphic computing protein nanowires sneak path |
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