Affiliation: | 1. Centre for Disruptive Photonic Technologies, TPI, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore, Singapore
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore, Singapore;2. Centre for Disruptive Photonic Technologies, TPI, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore, Singapore
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore, Singapore
Interdisciplinary Graduate School, Energy Research Institute @NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, 637553 Singapore, Singapore;3. Institute of Materials Research and Engineering, Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, 138634 Singapore, Singapore;4. Centre for Disruptive Photonic Technologies, TPI, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore, Singapore |
Abstract: | Emerging immersive visual communication technologies require light sources with complex functionality for dynamic control of polarization, directivity, wavefront, spectrum, and intensity of light. Currently, this is mostly achieved by free space bulk optic elements, limiting the adoption of these technologies. Flat optics based on artificially structured metasurfaces that operate at the sub-wavelength scale are a viable solution, however, their integration into electrically driven devices remains challenging. Here, a radically new approach to monolithic integration of a dielectric metasurface into a perovskite light-emitting transistor is demonstrated. It is shown that nanogratings directly structured on top of the transistor channel yield an 8-fold increase of electroluminescence intensity and dynamic tunability of polarization. This new light-emitting metatransistor device concept opens unlimited opportunities for light management strategies based on metasurface design and integration. |