Electrical,Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs |
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| Authors: | SS Kular BJ Sealy KG Stephens D Sadana GR Booker |
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| Affiliation: | Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, England;Department of Metallurgy and Science of Materials, University of Oxford, Oxford, England |
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| Abstract: | Electrical, Rutherford backscattering and transmission electron microscopy measurements have been carried out on GaAs samples implanted with 150 keV, 1.1015 zinc ions/cm2 and furnace annealed in the temperature range from room temperature to 900°C. A correlation between three types of measurement technique was established and four distinct annealing stages have been identified. For perfect recrystallization and maximum electrical activation an annealing temperature of 900°C is required. The maximum peak hole concentration was in the range 1–2.1019 holes/cm3. |
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