Carrier compensation in O+ implanted n-type GaAs |
| |
| Authors: | T. Asano P.L.F. Hemment |
| |
| Affiliation: | Department of Applied Electronics Tokyo Institute of Technology Yokohama 227 Japan;Department of Electronic and Electrical Engineering University of Surrey Guildford Surrey GU2 5XH England |
| |
| Abstract: | Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
