Silicon-gate CMOS devices with 300 Å gate oxides |
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Authors: | W.S. Lindenberger A.R. Tretola W.D. Powell A.K. Sinha |
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Affiliation: | Bell Laboratories, Murray Hill, NJ 07974, U.S.A. |
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Abstract: | Polycrystalline silicon gate (phosphorus doped) complementary MOS structures were fabricated with gate oxide thicknesses down to 300 Å. Measurements of the oxide fixed charge, Qss, and of the back-gate bias dependence of the threshold voltage indicate an absence of phosphorus diffusion through the gate oxide during conventional processing. |
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