Laser annealing of ainc implanted GaAs

GaAs samples implanted with 1.10¹⁵ zinc ions/cm³ have been annealed using pulses from a ruby laser operating in the freely generated mode. The percentage electrical activities and peak carrier concentrations were found to depend on the implant temperature, the laser energy density and the number of pulses. The maximum hole concentration measured was about 1.10²⁰ cm^?3 following irradiation with four pulses of 3 J/cm². Significant residual damage remained after single pulse irradiation at this energy density value. However, the carrier mobilities were similar to values for good single crystal GaAs.