Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy |
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| Authors: | S.B. Phatak S.M. Bedair Shigeo Fujita |
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| Affiliation: | Research Triangle Institute, Research Triangle Park, NC 27709, U.S.A.;North Carolina State University, Raleigh, NC 27650, U.S.A. |
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| Abstract: | Mn-doped Ga1?xInxAs crystals (0 < x < 0.25) have been grown by the LPE technique, and the doping characteristics and electrical properties of the layers have been studied by Hall measurement. The distribution coefficient of Mn has been found to depend on the substrate orientation. The acceptor enerby level is about 77 meV and is comparable to that of Mn-doped GaAs. p-n junction diodes with high InAs compositions, grown using the step grading technique, showed a diode factor of 2. Electron diffusion lengths greater than 3μm have been measured in these Mn doped layers. |
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