The p+n−n+ pulsed diode at extreme current densities—II: The forward pulsed case and its anomalous voltage response

The voltage transient response of the p⁺n^?n⁺ diode structure to a single intense current pulse in the forward direction is presented for current densities up to 10⁴ A/cm². The anomalous voltage response is studied by computer simulation of the device and compared with the experimental results. The response at these current densities becomes very dependent upon the carrier lifetimes and the recombination law chosen for the n⁺ region. At the larger current densities Avalanche generation and Auger recombination can exist simultaneously, yielding a larger than expected voltage across the device even as steady state is approached.