The effect of photogenerated carriers on the mean time delay for avalanche breakdown in p-n junctions

Avalanche breakdown in p-n junctions is preceded by a delay time between application of an overvoltage and the actual initiation of an avalanche discharge. The mean of this delay time has been studied as a function of photogeneration in p-n junction devices. Results agree well with McIntyre's theory of breakdown probability. The data further indicate that the probability of any given carrier initiating breakdown is independent of carrier concentration over the three orders of magnitude investigated.