Capacitance voltage characterization of poly SiSiO2Si structures |
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Authors: | Giora Yaron Dov Frohman-Bentchkowsky |
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Affiliation: | School of Applied Science and Technology, Hebrew University, Jerusalem, Israel |
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Abstract: | The high frequency C-V characteristics of poly SiSiO2Si capacitors have been studied. It is shown that the poly SiSiO2Si capacitor C-V characteristics are significantly different from the corresponding metal-SiO2Si capacitor due to field penetration into the poly Si layer. A comparison of the theoretical and measured C-V characteristics gives an estimate of the surface state charge density at the poly SiSiO2 interface and indicates that the surface potential behavior of this interface is trap and surface state dominated up to poly silicon impurity concentrations of approximately 1017 cm?3. |
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