Capacitance voltage characterization of poly SiSiO2Si structures

The high frequency C-V characteristics of poly SiSiO₂Si capacitors have been studied. It is shown that the poly SiSiO₂Si capacitor C-V characteristics are significantly different from the corresponding metal-SiO₂Si capacitor due to field penetration into the poly Si layer. A comparison of the theoretical and measured C-V characteristics gives an estimate of the surface state charge density at the poly SiSiO₂ interface and indicates that the surface potential behavior of this interface is trap and surface state dominated up to poly silicon impurity concentrations of approximately 10¹⁷ cm^?3.