首页 | 本学科首页   官方微博 | 高级检索  
     


Post-breakdown bulk oscillations in gold-doped silicon p+?i?n+ double-injection diodes
Authors:Bhaskar Mantha  HThurman Henderson
Affiliation:Solid State Electronics Laboratory, Loc. No. 30 Rhodes Hall, University of Cincinnati, Cincinnati, OH 45221 U.S.A.
Abstract:Experimental work on post-breakdown bulk oscillations in n-type gold-doped phosphorus-compensated p+?i?n+ double-injection diodes is presented. An empirical relationship for the frequency of oscillation in this region is derived for the first time and discussed.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号