Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study |
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Authors: | Shafeeque G Ansari Mushtaq Ahmad Dar Young-Soon Kim Hyung-Kee Seo Gil-Sung Kim Rizwan Wahab Zubaida A Ansari Jae-Myung Seo Hyung-Shik Shin |
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Affiliation: | (1) Thin Film Technology Laboratory, School of Chemical Engineering, Chonbuk National University, Jeonju, 561-576, Korea;(2) Functional Nano Thin-film Laboratory, Department of Physics, Chonbuk National University, Jeonju, 561-576, Korea;(3) Center for Interdisciplinary Research in Basic Sciences, Jamia Millia, Islamia, Jamia Nagar, New Delhi, 110025, India |
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Abstract: | A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with
1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force
microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma
etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance
of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched
substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers.
Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332
cm−1 and a peak at ∼1,580 cm−1 for both samples. |
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Keywords: | Diamond Nucleation Surface Treatment Plasma Etching Cl-radical Scratching |
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