| 半导体THz辐射的Monte Carlo模拟 |
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| 引用本文： | 刘东峰,秦家银. 半导体THz辐射的Monte Carlo模拟[J]. 电子学报, 2004, 32(8): 1314-1317 |
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| 作者姓名： | 刘东峰 秦家银 |
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| 作者单位： | 中山大学电子与通信工程系,光电材料与技术国家重点实验室,广东广州 510275 |
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| 基金项目： | 高等学校博士学科点专项科研项目，教育部跨世纪优秀人才培养计划，广东省自然科学基金，广东省教育厅千百十工程优秀人才培养基金 |
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| 摘 要： | 本文介绍了作者开发的基于面向对象语言C++和统一建模语言UML的半导体输运及THz辐射的蒙特卡罗模拟软件,并用该软件模拟了在强超短脉冲激光(光生载流子密度1019cm-3)及强电场 (100kV/cm) 作用下GaAs的THz时域波形和相应的半导体表面局域场.通过分析THz时域波形,我们发现强外加电场下的载流子速度过冲、载流子屏蔽(或器件反应过冲)是形成THz时域波形双极结构的原因.功率谱的分析表明增加外加电场有益于提高THz的低频成份的辐射,但对高频部分(＞6THz)影响不大.
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| 关 键 词： | 蒙特卡罗方法 THz辐射 C++ UML GaAs |
| 文章编号： | 0372-2112(2004)08-1314-04 |
| 收稿时间： | 2003-07-08 |
Monte Carlo Simulation of THz-Pulse Generation from Semiconductor Surface |
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| LIU Dong-feng,QIN Jia-yin. Monte Carlo Simulation of THz-Pulse Generation from Semiconductor Surface[J]. Acta Electronica Sinica, 2004, 32(8): 1314-1317 |
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| Authors: | LIU Dong-feng QIN Jia-yin |
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| Affiliation: | Department of Electronics and Communication Engineering,the State Key Laboratory of Optoelectronic Materials and Technologies,Zhongshan University,Guangzhou,Guangdong 510275,China |
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| Abstract: | An ensemble Monte Carlo simulator,which is developed with the object-oriented programming language C and unified modeling language UML,has been introduced in this paper.Using this simulator,we have simulated the local fields on the GaAs surfaces and the temporal waveforms of THz pulses when the GaAs surface is illuminated by intense sub-picosecond optical pulses (the corresponding photogenerated carrier density 10 19 cm -3 )and biased in a high applied external electrical field (100kV/cm).The power spectra show that the higher bias electric field may generate the higher power output within the range of 6THz,and beyond this range the effect of high bias fields is not obvious. |
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| Keywords: | C UML GaAs |
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