Further work function and interface quality improvement on Al2O3 capped high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors by incorporation of fluorine |
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| Authors: | Y.W. Chen C.M. LaiL.W. Cheng C.H. HsuC.W. Hsu |
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| Affiliation: | a United Microelectronics Corporation (UMC), ATD Exploratory Technologies Division, Nanke 3rd Rd., Tainan Science Park, Tainan, 74147, Taiwan, ROCb National Tsing Hua University, Department of Materials Science and Engineering, 101, Sec. 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan, ROC |
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| Abstract: | The impact of fluorine (F) incorporation into TiN/HfO2/SiO2 on work function has been investigated. By process scheme optimization, F implanted through sacrificial oxide layer reveals sufficient the flat-band voltage (VFB) shift ~ 170 mV without an equivalent oxide thickness (EOT) penalty. On the contrary, apparent EOT increasing was observed if F implanted directly through Si. Moreover, F incorporation into TiN/Al2O3/HfO2/SiO2, the VFB shift can be up to about 250 mV or 410 mV at 10 keV with a dose of 2 × 1015 cm− 2 or 5 × 1015 cm− 2, respectively. Effective work function has been boosted to 4.95 eV closer to the valence band edge. Besides, interface defect density also can be improved ~ 20% by F incorporation from charge pumping result. |
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| Keywords: | Hafnium oxide Fluorine Work function Interface defect density |
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