| Relaxation of residual stresses in SiC wafers by annealing |
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| 作者姓名： | CHEN Xiufang XU Xiangang HU Xiaobo LI Juan WANG Yingmin JIANG Shouzhen ZHANG Kai |
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| 作者单位： | State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
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| 基金项目： | 国家自然科学基金;国家高技术研究发展计划(863计划) |
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| 摘 要： | Residual stresses in SiC wafers, which were introduced during production processes including sawing, lapping, mechanical polishing （MP）, and chemical-mechanical polishing （CMP）, were evaluated in terms of changes in radius of curvature and high-resolution X-ray diffractometer （HRXRD） measurements. It was found that annealing was an effective method to reduce stress fields and to improve the wafer flatness. Lapping process generated more residual stresses than other machining processes, and these stresses could be relaxed by thermal treatment. The results showed that annealing was an essential procedure following lapping in the whole production process. The molten KOH etching results accounted for the correlation between the relaxation of stresses and the creation of basal screw dislocations.
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| 关 键 词： | 松弛 残留应力 SiC晶片 退火 机械抛光 |
| 收稿时间： | 2006-04-17 |
Relaxation of residual stresses in SiC wafers by annealing |
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| CHEN Xiufang XU Xiangang HU Xiaobo LI Juan WANG Yingmin JIANG Shouzhen ZHANG Kai.Relaxation of residual stresses in SiC wafers by annealing[J].Rare Metals,2006,25(6):704-708. |
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| Authors: | CHEN Xiufang XU Xiangang HU Xiaobo LI Juan WANG Yingmin JIANG Shouzhen ZHANG Kai JIANG Minhua |
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| Affiliation: | state Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | Residual stresses in SiC wafers, which were introduced during production processes including sawing, lapping, mechanical polishing (MP), and chemical-mechanical polishing (CMP), were evaluated in terms of changes in radius of curvature and high-resolution X-ray diffractometer (HRXRD) measurements. It was found that annealing was an effective method to reduce stress fields and to improve the wafer flatness. Lapping process generated more residual stresses than other machining processes, and these stresses could be relaxed by thermal treatment. The results showed that annealing was an essential procedure following lapping in the whole production process. The molten KOH etching results accounted for the correlation between the relaxation of stresses and the creation of basal screw dislocations. |
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| Keywords: | SiC annealing residual stress mechanical polishing chemical-mechanical polishing |
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