| 化学机械抛光技术研究现状与展望 |
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| 引用本文： | 张健,史宝军,杜运东,杨廷毅.化学机械抛光技术研究现状与展望[J].山东建筑工程学院学报,2009(2). |
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| 作者姓名： | 张健 史宝军 杜运东 杨廷毅 |
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| 作者单位： | 山东建筑大学机电工程学院; |
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| 基金项目： | 国家自然科学基金重点项目(U0635002);;山东省自然科学基金重点项目(Z2008F06) |
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| 摘 要： | 化学机械抛光技术几乎是迄今唯一可以提供全局平面化的表面精加工技术,可广泛用于集成电路芯片、计算机硬磁盘、微型机械系统(MEMS)、光学玻璃等表面的平整化。本文综述了CMP的技术原理和CMP设备及消耗品的研究现状,指出了CMP急待解决的技术和理论问题,并对其发展方向进行了展望。
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| 关 键 词： | 化学机械抛光 平整化 表面微加工 无颗粒抛光 |
Advances and problems of chemical mechanical polishing |
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| ZHANG Jian,SHI Bao-jun,DU Yun-dong,et al..Advances and problems of chemical mechanical polishing[J].Journal of Shandong Institute of Architecture and Engineering,2009(2). |
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| Authors: | ZHANG Jian SHI Bao-jun DU Yun-dong |
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| Affiliation: | School of Mechanical and Electric Engineering;Shandong Jianzhu University;Jinan 250101;China |
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| Abstract: | Chemical mechanical polishing(CMP) is the only finish machining technique up to date for surface global planarization,which has been widely used for the planarizing of integrated circuits(IC) chip,hard disk,micro-electromechanical systems(MEMS),optical glass,etc.In this paper,we review the technical principle,equipments and expendables used in CMP,and outline the technical and theoretical problems which are pressed for solution and give a future prospect of CMP. |
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| Keywords: | chemical mechanical polishing planarization surface micromachining abrasive-free polishing |
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