Proximity function calculation of patterns in positive electron resists |
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Authors: | J. Brandt J. H. Lai L. T. Shepherd |
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Affiliation: | (1) Honeywell Corporate Material Sciences Center, 55420 Bloomington, Minnesota |
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Abstract: | Experiments have been performed to determine the accuracy of the proximity function model in predicting feature dimensions for two positive electron resists. The model parameters were determined from the linewidth versus dose relationship for single beam scans. A small systematic ‘overdevelopment’ error was found in the calculated patterns, which is attributed to the limitations of the model assumptions. |
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Keywords: | Proximity function proximity corrections positive electron resists electron beam lithography |
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