A large-signal physical MESFET model for computer-aided design andits applications |
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Authors: | Pantoja R.R. Howes M.J. Richardson J.R. Snowden C.M. |
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Affiliation: | Dept. of Electr. & Electron. Eng., Leeds Univ. ; |
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Abstract: | A quasi-static, large-signal MESFET circuit model is presented. It is based on a comprehensive quasi-two-dimensional, semiclassical, physical device simulation, and its unique formulation and efficiency make it suitable for the computer-aided design of nonlinear MESFET subsystems. Using this approach the semiconductor equations are reduced to a consistent one-dimensional approximation requiring substantially less computing resources than a full two-dimensional simulation. CPU time is typically reduced by a factor of 1000. A single/two-tone harmonic balance analysis procedure which uses the describing frequency concept is also developed and combined with the MESFET model. Numerical load-pull contours as well as intermodulation distortion contours have been simulated; their comparison with measured results validates the approach taken |
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