Influence of the intensity of gg irradiation on the photoluminescence of GaAs:Te |
| |
| Authors: | V. I. Dubovik V. A. Bogdanova N. A. Davletkil’deev N. A. Semikolenova O. A. Shutyak |
| |
| Affiliation: | (1) Institute of Sensor Microelectronics, Siberian Branch, Russian Academy of Sciences, 644077 Omsk, Russia |
| |
| Abstract: | The influence of gg irradiation (60Co) of various intensities (P γ≈1.7−7.5kGR/h) on the photoluminescence of GaAs:Te single crystals [n 0=(1.2–2.3×1018 cm−3] is investigated. Together with the known photoluminescence impurity bands (hν max≈1.2 eV and/or hν max≈1.35 eV) and edge band (hν max≈1.51 eV), new bands are also observed in the spectra at hν max≈1.3 eV and hν max≈1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers. Fiz. Tekh. Poluprovodn. 32, 38–39 (January 1998) |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
