1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-addedefficiency |
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| Authors: | Shimura T Sakai M Izumi S Nakano H Matsuoka H Inoue A Udomoto J Kosaki K Kuragaki T Takano H Sonoda T Takamiya S |
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| Affiliation: | Mitsubishi Electr. Corp., Hyogo; |
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| Abstract: | High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 μm2. 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band |
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