Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements |
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Authors: | Redman-White W Lee MSL Tenbroek BM Uren MJ Bunyan RJT |
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Affiliation: | Southampton Univ., UK; |
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Abstract: | A method is presented for directly obtaining the temperature rise in MOSFETs due to channel current self-heating. The technique is based on small signal measurements, and also provides thermal time-constant data. No special layout structures are needed, making it suitable for bulk and SOI technologies. Experimental results are compared with data obtained using thermal noise measurements with a special SOI MOSFET, and the two figures show good agreement.<> |
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