Fabrication, packaging, and characterization of p-SOI Wheatstone bridges for harsh environments |
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| Authors: | J. K?hler A. Stranz L. Doering S. Merzsch N. Heuck A. Waag E. Peiner |
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| Affiliation: | 1. University of Technology, TU Braunschweig, Hans-Sommer-Str. 66, 38106, Braunschweig, Germany
2. Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116, Braunschweig, Germany
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| Abstract: | Strain gauges in p-type silicon-on-insulator (SOI) were investigated for data logging during deep drilling. Different metallization systems (Ti/Pt/Au, Ti/Pd/Au, and Ti/TiN/Au) were tested for high temperatures by measuring the specific resistance over time. Pressure-assisted Pick-and-Place silver sintering was applied to attach the fabricated p-SOI Wheatstone bridges on substrate carriers. The influence of the joining technique on the offset voltage was investigated as well as the temperature behavior during temperature cycling (50?cycles from 30°C up to 250°C). Furthermore, the temperature dependence of noise was analyzed. |
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