Influence of oxygen plasma treatment on properties of Methyl-BCN film |
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Authors: | Zhiming Lu Makoto HaraTakuro Masuzumi Makoto NishizakiChiharu Kimura Hidemitsu AokiTakashi Sugino |
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Affiliation: | Department of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan |
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Abstract: | Methyl-BCN film as a low dielectric material has been investigated by our group for Cu/low-k interconnection. We studied the ashing characteristics of Methyl-BCN films using oxygen plasma. As a contrast, porous-SiOCH films were also treated by oxygen plasma with the same conditions. The change of composition ratio of Methyl-BCN film is less than that of porous-SiOCH film after oxygen plasma treatment. There is no evident change in each bond of Methyl-BCN film after treatment, either. FT-IR analysis was carried out to investigate the chemical bonds of Methyl-BCN films and porous-SiOCH films with and without oxygen plasma treatment. The methyl groups of Methyl-BCN film were more stable than that of porous-SiOCH film. |
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Keywords: | Methyl Low-k Ashing BCN |
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