Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering |
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| Authors: | Ziwei Ma Jinyuan ZhouZhiyong Chen Erqing Xie |
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| Affiliation: | a Institute of Electronic Materials, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, Gansu, People''s Republic of Chinab Department of Physics & Electronic Engineering, Yuncheng University, Yuncheng 044000, People''s Republic of Chinac Department of Basic Courses, Xijing College, Xi''an 710123, Shanxi, People''s Republic of China |
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| Abstract: | Terbium-doped SiCN (SiCN:Tb) thin films were deposited by rf magnetron reactive sputtering at 800 °C. The as-prepared samples were characterized by XRD, FTIR, and XPS. The results showed that SiCN:Tb films mainly contained both SiC and Si3N4 nano-compositions with complicated chemical bond networks. Photoluminescence measurements indicated that the undoped SiCN films exhibited a blue-green light emission, while SiCN:Tb films emitted a strong green one. The SiC nanocrystallites formed in the undoped SiCN films might be responsible for the blue-green light emission, while the formed quaternary Si-C-Tb-O compositions in the doped samples could account for the strong green PL behaviors. |
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| Keywords: | SiCN Thin film Terbium Luminescence |
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