Preparation and characterization of boron doped diamond electrodes on diamond anvil for in situ electrical measurements under high pressure |
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Authors: | CL LiuYH Han Y WangG Peng BJ WuCX Gao |
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Affiliation: | State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China |
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Abstract: | A layer of boron doped diamond (BDD) film was deposited selectively on a diamond anvil and employed as electrodes for measuring the electrical resistivity of matter under high pressure. Both heavily doped and lightly doped electrodes were characterized by Raman spectroscopy and scanning electron microscopy. Though the BDD film electrodes contain sp2 carbon, it is still suitable for in situ high pressure electrical measurements. The dependability of diamond film electrodes was tested at high pressure up to 36 GPa, by measuring the electric resistance of C60 fullerene powder, and no damage of the electrodes was observed. |
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Keywords: | BDD film Electrodes Diamond anvil cell C60 fullerene |
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