Electroless oxidation of boron-doped diamond surfaces: comparison between four oxidizing agents; Ce, MnO4, H2O2 and S2O8 |
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Authors: | G CharrierS Lévy J VigneronA Etcheberry N Simon |
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Affiliation: | Institut Lavoisier de Versailles, UMR 8180, Université de Versailles Saint-Quentin en Yvelines, 45 avenue des Etats-Unis, 78000 Versailles, France |
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Abstract: | The electrochemical properties of diamond are very sensitive to the surface terminations. It is still a challenge to successfully produce well-defined “C-O” functions. In this paper, we describe and compare the oxidation of as-grown polycrystalline boron-doped diamond (BDD) films using four different oxidizing agents in aqueous media: Ce4+, MnO4−, H2O2 and S2O82−. The different treatments lead to the formation of oxygenated functions at the diamond surface, mainly singly oxidized “C-O” groups such as “C-OH” or “C-O-C”. Processes with Ce4+ and MnO4− seem to be particularly interesting as they both lead to the creation of a high amount of oxygenated functions and an improvement of the charge transfer at BDD surfaces. |
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Keywords: | Boron-doped polycrystalline diamond Electroless oxidation Chemical oxidation oxygen functional group Wettability Mott-Schottky plots XPS Charge transfer |
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