| 808nm无铝材料激光器可靠性筛选的实验探讨 |
| |
| 引用本文： | 高欣 曲轶. 808nm无铝材料激光器可靠性筛选的实验探讨[J]. 光电子．激光, 1999, 10(6): 580-581 |
| |
| 作者姓名： | 高欣 曲轶 |
| |
| 作者单位： | 长春光学精密机械学院高功率半导体激光国家重点实验室,长春,130022 |
| |
| 基金项目： | 国家重点实验室基金;; |
| |
| 摘 要： | 对８０８ｎｍ无铝ＩｎＧａＡｓＰ／ＧａＡｓ半导体激光器进行可靠性筛选实验，给出了器件老化前后的工作特性及其变化情况；讨论器件工作特性变化甚至失效的可能原因，并给出在进行器件的可靠性做初步的判定，认为工作电流的变化率小于１％时是可靠的器件。
|
| 关 键 词： | 半导体激光器 可靠性 筛选 |
| 修稿时间： | 1999-05-09 |
Reliability and Screen of 808 nm Al-free Semiconductor Lasers |
| |
| Gao Xin,Qu Yi,Bo Baoxue,Wang Xiaohu,Zhang Xingde. Reliability and Screen of 808 nm Al-free Semiconductor Lasers[J]. Journal of Optoelectronics·laser, 1999, 10(6): 580-581 |
| |
| Authors: | Gao Xin Qu Yi Bo Baoxue Wang Xiaohu Zhang Xingde |
| |
| Abstract: | Theexperiments on the reliability and screen of 808 nm Al-free semiconductor laser werecarried out to examine the operating characteristics and its changes after ageing.Thepossible origin of degradation or even failure behavior was discussed.We presented areliable criteria of screening semiconductor lasers.The reliability of a laser could becharacterized by the change rate of operating current.The lasers with the change rate ofoperating current smaller than 1% are classified to be reliable. |
| |
| Keywords: | semiconductor lasers reliability screen |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《光电子．激光》浏览原始摘要信息 |
|
点击此处可从《光电子．激光》下载全文 |
