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Characterization of surface profiles of LPCVD silicon nitride films by RBS profile |
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| Authors: | Yuh‐Chyoung Chen Huey‐Liang Hwang Cheng‐Ming Fou Jung‐Chen Liue |
| Affiliation: | 1. Department of Electrical Engineering , National Tsing Hua University , Hsinchu, Taiwan, 30034, R.O.C.;2. Department of Physics , University of Delaware , Newark, Delaware, U.S.A.;3. Electronic Research and Service Organization , Industrial Technology Research Institute , Hsinchu, Taiwan, R.O.C. |
| Abstract: | Abstract A Rutherford backscattering spectrometry (RBS)‐profile was applied to the characterization of the surface profile of silicon nitride films prepared by low pressure chemical vapor deposition (LPCVD). This method detected inhomogeneity in the silicon nitride films and demonstrated Si‐richness near the interface. This method was also used to study the silicon nitride profiles associated with bird's beak formation in VLSI devices. This paper presents a scheme for an auto‐search routine for an RBS‐profile program. The potential of the RBS‐profile method for the characterization of LPCVD silicon nitride films are demonstrated. |
| Keywords: | RBS‐profile LPCVD silicon nitride bird's beak formation |