Electroabsorptive Fabry-Perot reflection modulators with asymmetricmirrors |
| |
| Authors: | Yan RH Simes RJ Coldren LA |
| |
| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
| |
| Abstract: | A normally-on electroabsorptive surface-normal Fabry-Perot reflection modulator is reported with an on/off ratio of 22, insertion loss of 3.7 dB, and bandwidth of 3.4 nm for an operating voltage swing of 11 V. The asymmetric Fabry-Perot structure is made with asymmetric mirrors using a quarter-wavelength grating of 15 1/2-periods on the bottom and an air-semiconductor interface on the top. The active region is 1.4 μm thick and composed of 100Å GaAs/100 A Al0.2Ga0.8As multiple quantum wells. The structure provides both high-efficiency and bandwidth for surface-normal modulators |
| |
| Keywords: | |
|
|
