| 频段转换二极管工艺设计 |
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| 引用本文： | 鲍天保,阎立亮.频段转换二极管工艺设计[J].山东大学学报(工学版),1990(3). |
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| 作者姓名： | 鲍天保 阎立亮 |
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| 作者单位： | 山东工业大学基础课教学部，济南半导体四厂 |
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| 摘 要： | 以一维近似模型为基础,对频段转换二极管工艺进行计算机分析,并确立一较合理的工艺方案。理论计算与实际结果较为一致。本工艺的管芯电极采用Ti-Ni-Ag多层金属电极结构,以适用于微玻璃封装技术。
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| 关 键 词： | P-n结 二极管 波段开关 金属电极 |
CHIP PROCESSING DESIGN FOR BAND SWITCH DIODE |
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| Bao Tianbao et al.CHIP PROCESSING DESIGN FOR BAND SWITCH DIODE[J].Journal of Shandong University of Technology,1990(3). |
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| Authors: | Bao Tianbao |
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| Affiliation: | Dept. of Basic Sci. |
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| Abstract: | Using the one-dimensional approximation model, numerically calculates the chip processing for band switch diode and presents a more reasonable design proposal. The calculating result agrees with the experiment. In order to suit the micro-glass seal technique, the TiNi-Ag multilayer metal structure is used for diode electrode. |
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| Keywords: | P-n junction Diodes Band switch Metal electrode |
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