Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation |
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| Authors: | Suzuki K. Tada Y. Kataoka Y. Kawamura K. Nagayama T. |
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| Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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| Abstract: | We previously proposed a compact model of amorphous layer thickness over a wide range of ion implantation conditions using a vertical ion implantation profile parameter database. We also proposed a new parameter for the through dose. We extended the model to any tilt angle for ion implantation using one more parameter for the lateral straggling of the ion implantation profile. |
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