22.7-dB Gain $-$19.7-dBm $ICP_{1{rm dB}}$ UWB CMOS LNA |
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Authors: | Pepe D. Zito D. |
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Affiliation: | Dept. of Inf. Eng., Univ. of Pisa, Pisa, Italy; |
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Abstract: | A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B 3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness. |
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