| 快速热退火对高应变InGaAs/Ga As量子阱的影响 |
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| 引用本文： | 苗振华,徐应强,张石勇,吴东海,赵欢,牛智川. 快速热退火对高应变InGaAs/Ga As量子阱的影响[J]. 半导体学报, 2005, 26(9): 1749-1752 |
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| 作者姓名： | 苗振华 徐应强 张石勇 吴东海 赵欢 牛智川 |
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| 作者单位： | 中国科学院半导体研究所半导体超晶格国家重点实验室 北京100083(苗振华，徐应强，张石勇，吴东海，赵欢)，中国科学院半导体研究所半导体超晶格国家重点实验室 北京100083(牛智川) |
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| 摘 要： | 用固态分子束外延技术生长了高应变In0.45Ga0.55As/GaAs量子阱材料. 研究了快速热退火对高应变InGaAs/GaAs量子阱材料光学性质的影响. 本文采用假设InGaAs/GaAs量子阱中的In-Ga原子扩散为误差函数扩散并解任意形状量子阱的薛定谔方程的方法，对不同退火温度下InGaAs/GaAs量子阱室温光致发光峰值波长拟合，得到了In原子在高应变InGaAs/GaAs量子阱中的扩散系数以及扩散激活能（0.88eV) .
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| 关 键 词： | 分子束外延；高应变In0.45Ga0.55As/GaAs量子阱；快速热退火；室温光致发光 |
| 文章编号： | 0253-4177（2005）09-1749-04 |
| 收稿时间： | 2005-01-27 |
| 修稿时间： | 2005-04-21 |
Effect of Rapid Thermal Annealing on Highly Strained InGaAs/GaAs Quantum Well |
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| Miao Zhenhua, Xu Yingqiang, Zhang Shiyong, Wu Donghai, Zhao Huan, Niu Zhichuan. Effect of Rapid Thermal Annealing on Highly Strained InGaAs/GaAs Quantum Well[J]. Chinese Journal of Semiconductors, 2005, 26(9): 1749-1752 |
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| Authors: | Miao Zhenhua Xu Yingqiang Zhang Shiyong Wu Donghai Zhao Huan Niu Zhichuan |
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| Affiliation: | State Key Laboratory for Su perlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | A highly strained In_ 0.45Ga_ 0.55As/GaAs quantum well is grown by solid source molecular beam epitaxy (MBE).The effect of rapid thermal annealing on the optical properties of the highly strained InGaAs/GaAs quantum well is studied.By fitting the room temperature photoluminescence peak wavelength of the highly strained InGaAs/GaAs quantum well,we obtain the diffusion coefficients and the activation energy of In-Ga atoms interdiffusion (0.88eV). |
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| Keywords: | molecular beam epitaxy highly strained In_ 0.45Ga_ 0.55As/GaAs quantum well rapid thermal annealing room temperature photoluminescence |
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