| 硅纳米线的掺杂工艺与检测 |
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| 引用本文： | 郭池,唐元洪,裴立宅,张勇.硅纳米线的掺杂工艺与检测[J].压电与声光,2006,28(4):492-495. |
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| 作者姓名： | 郭池 唐元洪 裴立宅 张勇 |
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| 作者单位： | 湖南大学,材料科学与工程学院,湖南,长沙,410082 |
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| 基金项目： | 湖南省科技计划基金资助项目(04FJ3036) |
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| 摘 要： | 掺杂硅纳米线有可能成为一种重要的硅纳米电子器件材料。因而,硅纳米线的掺杂工艺与检测很重要。半导体的掺杂工艺主要为扩散法,而硅纳米半导体线的掺杂检测方法主要包括电流-电压法、拉曼光谱、光致发光(PL)光谱、X-射线光电子能谱(XPS)及近边X-射线吸收精细结构光谱(NEXAFS)等。该文介绍了可引入到硅纳米线研究的现有半导体的掺杂工艺及检测方法,并就硅纳米线的掺杂工艺及检测的最新进展做作了详细的讨论。
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| 关 键 词： | 硅纳米线 半导体 掺杂 检测 |
| 文章编号： | 1004-2474(2006)04-0492-04 |
| 收稿时间： | 2004-12-29 |
| 修稿时间： | 2004年12月29 |
Doping Techniques and Characterizations of Silicon Nanowires |
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| GUO Chi,TANG Yuan-hong,PEI Li-zhai,ZHANG Yong.Doping Techniques and Characterizations of Silicon Nanowires[J].Piezoelectrics & Acoustooptics,2006,28(4):492-495. |
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| Authors: | GUO Chi TANG Yuan-hong PEI Li-zhai ZHANG Yong |
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| Affiliation: | College of Materials Science and Engineering, Hunan University, Changsha 410082, China |
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| Abstract: | Doping silicon nanowire is the Si-based material of silicon nanoelectronic devices.Diffusion is one of main doping techniques of semiconducotor.Characterizations of doping semiconductor and silicon nanowires mainly include current-voltage method Raman spectrum,photoluminesence(PL),X-ray photoelectron energy spectrum(XPS),near edge X-ray absorption fine structure spectrum(NEXAFS),etc.The doping techniques and characterizations of semiconductor which can be used silicon nanowires are reviewed.The recent development of doping techniques and characterizations on silicon nanowires is discussed in detail. |
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| Keywords: | silicon nanowire semiconductor doping characterization |
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