| LaB_6/GaAs(100)表面及界面的角分辨俄歇研究(英文) |
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| 引用本文： | 刘古,鲍德松,张训生,鲍世宁.LaB_6/GaAs(100)表面及界面的角分辨俄歇研究(英文)[J].固体电子学研究与进展,1989(4). |
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| 作者姓名： | 刘古 鲍德松 张训生 鲍世宁 |
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| 作者单位： | 浙江大学
(刘古，鲍德松，张训生)，浙江大学(鲍世宁) |
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| 摘 要： |
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Angle Resolved Auger Spectroscopy Study on the LaB_6/GaAs(100) Surface and Interface |
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| Abstract: | The film of LaB6 on GaAs(100) was deposited by ion sputtering. The LaBe/GaAs(100) interface was investigated by Auger electron spectroscopy. Results show the composition of the film is almost the same as that of LaB6 source Adhesion of the film to GaAs(100) surface is very good. AES measurements of the change of LaBe coverage versus time do not exhibit a saturation. We think that LaBe does not grow in layer by layer, but forms islands on the GaAs(100) surface with ununiform thickness. |
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