A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability |
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| Authors: | Plouchart J-O Zamdmer N Jonghae Kim Trzcinski R Narasimha S Khare M Wagner LF Sweeney SL Chaloux S |
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| Affiliation: | IBM Semicond. R&D Center, Hopewell Junction, NY, USA; |
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| Abstract: | A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz F/sub t/, 208-GHz F/sub max/, 1.45-mS//spl mu/m gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF//spl mu/m/sup 2/, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications. |
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