| Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates |
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| 引用本文： | 吕业刚 邓水凤 龚伦军 杨建桃. Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates[J]. 中国有色金属学会会刊, 2006, 16(4): 912-916. DOI: 10.1016/S1003-6326(06)60350-6 |
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| 作者姓名： | 吕业刚 邓水凤 龚伦军 杨建桃 |
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| 作者单位： | Faculty of Material and Photoelectronic Physics Xiangtan University Xiangtan 411105 China，Faculty of Material and Photoelectronic Physics Xiangtan University Xiangtan 411105 China Key Laboratory for Advanced Materials and Rheological Properties Ministry of Education Xiangtan University X iangtan 411105 China，Faculty of Material and Photoelectronic Physics Xiangtan University Xiangtan 411105 China Key Laboratory for Advanced Materials and Rheological Properties Ministry of Education Xiangtan University X iangtan 411105 China，Faculty of Material and Photoelectronic Physics Xiangtan University Xiangtan 411105 China |
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| 基金项目： | 国家自然科学基金;湖南省自然科学基金 |
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| 摘 要： | 1 Introduction Ferroelectric thin films have been widely investigated in recent years. Not only the ferroelectric, dielectric, and piezoelectric properties were found to be promising for microelectric and micromechanical applications[1], but also the phy…
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| 关 键 词： | 外应力 相变 介电常数 正交基层 相图 |
| 收稿时间： | 2006-04-10 |
| 修稿时间： | 2006-04-25 |
Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates |
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| L Ye-gang,DENG Shui-feng,GONG Lun-jun,YANG Jian-tao. Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates[J]. Transactions of Nonferrous Metals Society of China, 2006, 16(4): 912-916. DOI: 10.1016/S1003-6326(06)60350-6 |
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| Authors: | L Ye-gang DENG Shui-feng GONG Lun-jun YANG Jian-tao |
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| Affiliation: | L(U) Ye-gang,DENG Shui-feng,GONG Lun-jun,YANG Jian-tao |
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| Abstract: | A Landau-Ginsburg-Devonshire(LD)-type thermodynamic theory was used to describe the effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates which induce nonequally biaxial misfit strains in the films plane. The “misfit strain-external stress” and “external stress-temperature” phase diagrams were constructed for single-domain BaTiO3(BT) and PbTiO3(PT) thin films. It is shown that the external stress may lead to the rotation of the spontaneous polarization and a gradual change of its magnitude, which may result in phase transition. Nonequally biaxial misfit strains dependence of the stability of polarization states may be governed by external stress. At room temperature, stress-induced ferroelectric/paraelectric phase transition which occurs in film on cubic substrate does not take place in the ferroelectric thin film grown on orthorhombic substrate. It is also shown that the nonequally misfit strains in the film plane may lead to the appearance of new phases which do not form in films grown on cubic substrates under external stress. The dependence of the dielectric response on the external stress is also studied. It is shown that the dielectric constants of single-domain PT and BT films are very sensitive to the external stress under the given anisotropic misfit strains-temperature conditions. It presents theoretical evidence that the external stress and anisotropic misfit strains can be employed for improving the thin films physical properties. |
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| Keywords: | external stress phase transition dielectric constant orthorhombic substrate misfit strain |
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