| 高压VDMOSFET击穿电压优化设计 |
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| 引用本文： | 严向阳,唐晓琦,淮永进.高压VDMOSFET击穿电压优化设计[J].微纳电子技术,2008,45(10). |
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| 作者姓名： | 严向阳 唐晓琦 淮永进 |
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| 作者单位： | 1. 佛山市蓝箭电子有限公司,广东,佛山,528000
2. 北京燕东微电子有限公司,北京,100015 |
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| 摘 要： | 通过理论计算,优化了外延层厚度和掺杂浓度,对影响击穿电压的相关结构参数进行设计,探讨了VDMOSFET的终端结构。讨论了场限环和结终端扩展技术,提出了终端多区设计思路,提高了新型结构VDMOSFET的漏源击穿电压。设计了800V、6A功率VDMOSFET,同场限环技术相比,优化的结终端扩展技术,节省芯片面积10.6%,而不增加工艺流程,漏源击穿电压高达882V,提高了3%,由于芯片面积的缩小,平均芯片中测合格率提高5%,达到了预期目的,具有很好的经济价值。
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| 关 键 词： | 纵向双扩散金属氧化物半导体场效应晶体管 击穿电压 结终端扩展 终端结构 外延层厚度和掺杂浓度 |
Optimum Design of Breakdown Voltage of High-Voltage VDMOSFET |
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| Yan Xiangyang,Tang Xiaoqi,Huai Yongjin.Optimum Design of Breakdown Voltage of High-Voltage VDMOSFET[J].Micronanoelectronic Technology,2008,45(10). |
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| Authors: | Yan Xiangyang Tang Xiaoqi Huai Yongjin |
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| Affiliation: | Yan Xiangyang1,Tang Xiaoqi2,Huai Yongjin2(1.Foshan Blue Rocket Electronics Co.Ltd,Foshan 528000,China,2.Beijing Y,ong Micro Electronic Co.Ltd,Beijing 100015,China) |
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| Abstract: | By the theoretical calculation,the thickness and doping concentration of EPI were improved.The parameters which influence the breakdown voltage of VDMOSFET were presented and designed.The termination structure of vertical double-diffusion metal-oxide-semiconductor field-effect transistor(VDMOSFET),field limit ring(FLR),junction termination extension(JTE)and the multiple-zone design were discussed.An 800 V,6 A power VDMOSFET was designed.Compared with FLR,the chip size of JTE decreases 10.6% without increasi... |
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| Keywords: | VDMOSFET breakdown voltage junction termination extension(JTE) termination structure thickness and doping concentration of EPI |
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