| MOS型新型功率器件终端场分析与实验 |
| |
| 引用本文： | 弓小武 高玉民. MOS型新型功率器件终端场分析与实验[J]. 固体电子学研究与进展, 1996, 16(2): 162-167 |
| |
| 作者姓名： | 弓小武 高玉民 |
| |
| 作者单位： | 西安交通大学电子工程系微电子研究室 |
| |
| 摘 要： | 采用二维有限元数值分析的方法，开发了用于反向偏置ｐ－ｎ结分析的模拟软件，可以模拟与ＭＯＳ型功率器件反向耐压有关的终端浅结场环、场板、ＳｉＯ２介质及界面态。为高压器件的终端研究、设计和优化提供了精确而有效的ＣＡＤ工具。此文介绍模拟所采用的物理模型和模拟方法，并以三环浅结带场板终端为例，给出部分模拟实例、结论及实验结果。
|
| 关 键 词： | 功率器件，终端，数值计算 |
Analysis and Experiment of MOS Power Device Termination |
| |
| Gong Xiaowu, Gao Yumin, Luo Jinsheng. Analysis and Experiment of MOS Power Device Termination[J]. Research & Progress of Solid State Electronics, 1996, 16(2): 162-167 |
| |
| Authors: | Gong Xiaowu Gao Yumin Luo Jinsheng |
| |
| Abstract: | By using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of reverse biased p-n junctions. It can simulate field limiting rings, field plates, SiO2 dielectric and interface states, relating to reverse characteristics of MOS power device, and provide an efficient means of CAD on research and design optimization for device termination. Physical model and method used in this model are introduced,and some simulation example and experiment result are given in this paper. |
| |
| Keywords: | Power Device Termination Numerical analysis |
| 本文献已被 CNKI 维普 等数据库收录！ |
