| （Short communication） Synthesis of GaN films on porous silicon substrates |
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| 引用本文： | DONG Zhihua XUE Chengshan ZHUANG Huizhao GAO Haiyong TIAN Deheng WU Yuxin. （Short communication） Synthesis of GaN films on porous silicon substrates[J]. 稀有金属(英文版), 2006, 25(1): 96-98. DOI: 10.1016/S1001-0521(06)60022-3 |
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| 作者姓名： | DONG Zhihua XUE Chengshan ZHUANG Huizhao GAO Haiyong TIAN Deheng WU Yuxin |
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| 作者单位： | Institute of Semiconductors Shandong Normal University, Jinan 250014, China |
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| 基金项目： | This work was financially supported by the National Natural Science Foundation of China （Nos. 90201025 and 90301002）. |
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| 摘 要： | A novel and simple method was employed to synthesize GaN films on porous silicon （PS） substrates, GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction （XRD） to identify crystalline structure. Fourier transmit infrared （FFIR） spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy （SEM） and were found to consist of many big crystal grains. Photoluminescence （PL） spectrum was used to illuminate the optical property of the GaN films.
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| 关 键 词： | 合成 氮化镓膜 多孔硅 半导体技术 磁控溅射 |
| 收稿时间： | 2004-12-05 |
Synthesis of GaN films on porous silicon substrates |
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| DONG;Zhihua;XUE;Chengshan;ZHUANG;Huizhao;GAO;Haiyong;TIAN;Deheng;WU;Yuxin. Synthesis of GaN films on porous silicon substrates[J]. Rare Metals, 2006, 25(1): 96-98. DOI: 10.1016/S1001-0521(06)60022-3 |
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| Authors: | DONG Zhihua XUE Chengshan ZHUANG Huizhao GAO Haiyong TIAN Deheng WU Yuxin |
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| Affiliation: | 1. Institute of Chemical Process Fundamentals, Czech Academy of Sciences, Rozvojova 135, 160 00 Prague 6, Czech Republic;2. Faculty of Nuclear Sciences and Physical Engineering, of the Czech Technical University, Brehova 7, 115 19 Prague 1, Czech Republic;3. Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, 166 28 Prague 6, Czech Republic |
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| Abstract: | |
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| Keywords: | semiconductor technology GaN films magnetron sputtering porous silicon |
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