Interstitial solid solution Hf5GaxSn3 (x = 0-1) |
| |
| Authors: | I Voznyak Ya TokaychukV Hlukhyy TF FässlerR Gladyshevskii |
| |
| Affiliation: | a Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya St. 6, 79005 Lviv, Ukraine
b Department of Chemistry, Technische Universität München, Lichtenbergstr. 4, 85747 Garching, Germany |
| |
| Abstract: | Formation of an interstitial solid solution Hf5GaxSn3 (x = 0-1) based on the binary compound Hf5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a = 8.36562(6), c = 5.70775(4) Å from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga0.16(3)Sn3 (a = 8.3288(12), c = 5.6988(11) Å), Hf5Ga0.53(2)Sn3 (a = 8.4205(12), c = 5.7655(12) Å) and Hf5GaSn3 (a = 8.5564(12), c = 5.7859(12) Å). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices. |
| |
| Keywords: | Hafnium Gallium Tin X-ray diffraction Crystal structure Solid solution |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
