Electrical properties of CuInSe2 films prepared by evaporation of Cu2Se and In2Se3 compounds

We prepared CuInSe₂ films by evaporating In₂Se₃ and Cu₂Se compounds instead of elemental sources. The resulting CuInSe₂ film grown at 680°C had a smooth and dense microstructure with the grain size of 2 3 μm. But the CuInSe₂ films were Cu-rich, with a low resistivity of about 0.1 Ω cm. So we conducted H₂ post annealing to control the electrical resistivity and composition of CuInSe₂ films. In a H₂ atmosphere, the resistivity increased to about 100 Ω cm by annealing at 350°C for 1 h. The resistivity decreased again when the annealing temperature was above 350°C. This resistivity change might be related to the contents of Cu, In, Se atoms and the valency states of Cu and In ions in the films. We discussed the reason of resistivity change caused by H₂ post annealing in this paper.