Effects of the temperature of hot isostatic pressing treatment on Cr–Si targets |
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| Authors: | Chung-Hung Tam Shih-Chin Lee Shih-Hsien Chang Tzu-Piao Tang Hsin-Hung Ho Hui-Yun Bor |
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| Affiliation: | 1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC;2. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROC;3. Materials and Electro-Optics Research Division of Chung-Shan Institute of Science and Technology, Lung-tan 325, Taiwan, ROC |
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| Abstract: | Commercial as-hp (hot pressing) treated Cr–Si targets are used throughout this study, with three different compositions: Cr20–Si80, Cr35–Si65 and Cr50–Si50. To evaluate the effects of microstructure and properties of as-hp treated Cr–Si targets by hot isostatic pressing (HIP) SEM, XRD and porosity inspections were performed. The experimental results showed that the 1373 K, 1750 MPa, 4 h HIP treated with three different Cr–Si targets had suppressed porosities successfully. The most efficient was Cr50–Si50 target subjected to HIP treatment. Porosity decreased about 60% after HIP treatment, and both the nitrogen and oxygen concentrations of the targets were slightly increased after HIP treatment. This was especially true for the single silicon in Cr–Si targets such as Cr20–Si80 and Cr35–Si65. The aim of this paper is to discuss these methods and finding suitable temperatures for the HIP for Cr–Si targets. |
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