Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition |
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| Authors: | Yue YuanZheng Hao Yue Feng Qian Zhang JinCheng Ma XiaoHua Ni JinYu |
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| Affiliation: | 1.Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China
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| Abstract: | Science China Technological Sciences - We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al2O3 as the gate dielectric.... |
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