CMP后的晶圆的测量和评估方法研究

综述了CMP后的晶圆测量方法，比较指出：光学干涉法适宜于测量较厚的薄膜，而椭圆偏振法精度较高，但成本高昂，适宜于测量薄的薄膜。CMP后需要检测晶圆的表面状况，列举了常用的扫描电子显微镜、原子力显微镜和光散射探测仪。扫描电子显微镜常用于特征线宽的测量，其精度可达4nm；原子力显微镜是根据范德华力的原理制造，其探测精度高达0．1nm：但二者最大的缺陷就是操作复杂，成像十分费时。散射探测仪根据光的散射理论制造。可以快捷地全表面成二维图像，是值得推荐的一种测量手段。最后，指出今后的测量技术对半导体工艺的影响。

Study on Measurement and Evaluation of Post-CMP

The paper detailed overview the measurement methods of post-CMP,and pointing out with comparison:spectroscopic reflectometry is suit to thicker film,and spectroscopic ellipscometry has high precision but very expensive,it is suitable for measuring thin film;we have to understand the wafer profile after CMP,usually the metrology tools are scanning electron microscope(SEM)、atomic force microscope(ATM) and scatterometry.Scanning electron microscope is used for measuring the line width,which accuracy is up to 4 nm,atomic force microscope is based on vanderwaals force theory,it provides a resolution between 0.1nm,depending on the hardness of the material being scanned.However,both of them biggest flaws is complicated to operate,to form image is very time-consuming.Scatterometry is the metrology that relates the geometry of a sample to its light scattering effects,can be quickly to force the two-dimensional image,which is recommended amongthe metrologies.At the end,the better metrology in the future will play a big promotion role in semiconductor technology.