| 射频微机械CPW开关的研究 |
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| 引用本文： | 张正元,温志渝,徐世六,张正番,黄尚廉.射频微机械CPW开关的研究[J].电子学报,2003,31(5):671-673. |
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| 作者姓名： | 张正元 温志渝 徐世六 张正番 黄尚廉 |
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| 作者单位： | 1. 重庆大学光电工程学院,重庆 400044;2. 国家模拟集成电路重点实验室,重庆 400060 |
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| 基金项目： | 重庆市科技攻关项目 (No 2 0 0 1 70 36) |
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| 摘 要： | 本文采用聚酰亚胺牺牲层技术和二氧化硅介质隔离技术,成功地在绝缘多晶硅衬底上研制出一种射频微机械CPW开关.初步测试结果如下:开态电容为0.21pF,关态电容为6.1pF,致动电压为22V,关态下的隔离度为35dB,开态下插入损耗为3dB.该工艺完全与硅基IC工艺兼容,这为射频微机械CPW开关与IC实现单片集成化,降低体积提高可靠性打下了基础.
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| 关 键 词： | 射频微机械开关 CPW开关 金属膜 绝缘层 牺牲层 |
| 文章编号： | 0372-2112(2003)05-0671-03 |
Research for RF Micromechanical CPW Switch |
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| ZHANG Zheng yuan ,WEN Zhi yu ,XU Shi lu ,ZHANG Zheng fan ,HUANG Shang lian.Research for RF Micromechanical CPW Switch[J].Acta Electronica Sinica,2003,31(5):671-673. |
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| Authors: | ZHANG Zheng yuan WEN Zhi yu XU Shi lu ZHANG Zheng fan HUANG Shang lian |
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| Affiliation: | 1. Dept.of Optoelectronic Eng.Chongqing University,Chongqing 400044,China;2. National Laboratory of Analog Integrated Circuits,Chongqing 400060,China |
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| Abstract: | An RF micromechanical CPW switch on the isolation polysilicon has been developed by using polymide sacrificial layer,and by dielectric isolating technology.The preliminary test results are as follows:the Coff and Con are 0 21pF,6 1pF respectively;the actuated voltage is 22V.The isolation is 35dB in the off state,and insertion loss is 3dB in the on state.The process is compatible with silicon IC,so is the basis of monolithically integrating RF micromechanical switch and IC for high reliability and low volume. |
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| Keywords: | RF micromechanical switch CPW switch metal membrane isolation layer sacrificial layer |
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