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The influence of Sb on glass‐forming ability of Ga‐containing As2Se3 glasses
Authors:Yaroslav Shpotyuk  Catherine Boussard‐Pledel  Virginie Nazabal  Bruno Bureau
Affiliation:1. Laboratoire Verres et Céramiques UMR‐CNRS 6226, University of Rennes 1, Rennes Cedex, France;2. CITNSEK, Faculty of Mathematics and Natural Sciences, University of Rzeszow, Rzeszow, Poland;3. Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Lviv, Ukraine
Abstract:Effect of As to Sb substitution on glass‐forming ability of As2Se3 glass under Ga additions was comprehensively studied using optical spectroscopy in visible and IR regions, differential scanning calorimetry, X‐ray diffraction as well as Raman scattering techniques. The crystallization processes enhanced by Ga additions to As2Se3 glass were significantly suppressed under such As to Sb substitution. Following conventional synthesis, it was possible to substitute up to 50% of As by Sb within Gay(As0.40?xSbxSe0.60)100?y cut‐section without essential impact on glassy state, thus improving optical properties in the IR region by lowering the phonon energy. In the case of Gay(As0.28Sb0.12Se0.60)100?y cut‐section, up to 8 at.% of Ga can be introduced without crystallization, whereas in case of Gay(As0.40Se0.60)100?y system, glass‐forming ability is limited just up to 3 at.% of Ga. The prepared Ga5(As0.28Sb0.12Se0.60)95 glass composition was shown to be the richest in Ga keeping its vitreous state, good optical and thermodynamic properties allowing further rare‐earth doping and fiber drawing.
Keywords:chalcogenide glass  crystallization  glass‐forming ability  IR transmission
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