Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition |
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| Authors: | Peipei Zhu Qingfang Xu Ruyi Chen Song Zhang Meijun Yang Rong Tu Lianmeng Zhang Takashi Goto Jiasheng Yan Shusen Li |
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| Affiliation: | 1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, China;2. International School of Material Science and Engineering, Wuhan University of Technology, Wuhan, China;3. Institute for Materials Research, Tohoku University, Sendai, Japan;4. Tech Semiconductors, Ltd., Xiangyang, China |
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| Abstract: | β‐SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was β‐SiC(001){111}//Si(001){111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 μm/h, which is 5‐200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing β‐SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8° to the surface of substrate. The growth mechanism of the films was discussed. |
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| Keywords: | chemical vapor deposition silicon carbide |
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