不同衬底上低温生长的ZnO晶体薄膜的结构及光学性质比较

采用电子束反应蒸发方法，在单晶Si(001)及玻璃衬底上低温外延生长了沿c轴高度取向的单晶ZnO薄膜,并对沉积的ZnO晶体薄膜的结构和光学性质进行了分析比较。通过对ZnO薄膜的X射线衍射(XRD)分析及光致荧光激发谱(PLE)测量，研究了衬底材料结构特性、生长温度及反应气氛中充O

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Low temperature epitaxial growth of highly c-axis oriented ZnO thin films was achieved on Si(001)and glass substrates by reactive e-beam evaporation.The influences of growth temperature and structural character of substrates on the microstructural evolution were studied by X-ray diffraction (XRD).Optical transition in the deposited ZnO films was investigated by photoluminescence excitation (PLE)spectrosocpy.The results showed that substrate temperature was critical to obtain high quality ZnO and the optimal growth temperature on glass was about 70 ℃ ,higher than that of the film grown on Si(001).The optical absorption property of ZnO grown on Si(001) is better than that of the film grown on glass.The maintaining of high enough O2 pressure in the reaction chamber during deposition can significantly improve the band-band absorption characteristics of ZnO films,but no improvement in structural quality could be observed from the X-ray diffraction.