| 异质结双极晶体管基区复合电流的解析模型 |
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| 引用本文： | 严北平,孙晓玮,罗晋生. 异质结双极晶体管基区复合电流的解析模型[J]. 微纳电子技术, 1998, 0(5) |
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| 作者姓名： | 严北平 孙晓玮 罗晋生 |
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| 作者单位： | 西安电子科技大学微电子学研究所，西安交通大学微电子工程系 |
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| 摘 要： | 从求解异质结双极晶体管基区的二维电流连续性方程出发，推导出了基区少数载流子浓度的解析解，由此获得了基区各种复合电流的解析表达式。基于该模型完成了算法研究和软件编制，计算出了器件所能达到的理论电流增益。
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| 关 键 词： | 异质结双极晶体管 基区复合电流 电流增益 |
Analytical Modeling of the Base Recombination Currents of Heterojunction Bipolar Transistor |
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| Yan Beiping,Sun Xiaowei. Analytical Modeling of the Base Recombination Currents of Heterojunction Bipolar Transistor[J]. Micronanoelectronic Technology, 1998, 0(5) |
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| Authors: | Yan Beiping Sun Xiaowei |
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| Abstract: | An analytical solution for the minority carrier concentration to the two dimension diffusion equation is derived.Analytical modelings of the base recombination currents of heterojunction bipolar transistors are established.The calculation method and computer program have been carried out.The relations of the different components of base current to the device geometry are calculated.The theoretical current gain of HBTs has been reached. |
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| Keywords: | HBT Base recombination currents Current gain |
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